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MP4015
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
MP4015
High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
Industrial Applications Unit: mm
* * * * * *
Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = 5 A (max) High DC current gain: hFE = 1000 (min) (VCE = 4 V, IC = 3 A) Zener diode included between collector and base. Unclamped inductive load energy: ES/B = 100 mJ (min)
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 55 60 10 6 5 8 0.5 2.0 Unit V V V A A W
JEDEC JEITA TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
PT Tj Tstg
4.0 150 -55 to 150
W C C
Array Configuration
3 4 5 6 7 8 9
2 1 R1 R2
10 R1 5 k R2 150
1
2002-11-20
MP4015
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit
Rth (j-a)
31.3
C/W
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage DC current gain Symbol ICBO ICEO IEBO V (BR) CBO hFE (1) hFE (2) Collector-emitter Base-emitter Base-emitter voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) (1) VBE (sat) (2) VBE (sat) VBE fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 45 V, IE = 0 A VCE = 45 V, IB = 0 A VEB = 6 V, IC = 0 A IC = 10 mA, IE = 0 A VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 1 A, IB = 4 mA IC = 3 A, IB = 10 mA IC = 1 A, IB = 4 mA VCE = 4 V, IB = 3 A VCE = 3 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 10 Min 0.3 50 1000 1000 Typ. 0.9 1.3 1.6 1.8 7 44 0.6 Max 10 10 10 70 1.4 2.0 2.0 2.5 V MHz pF V Unit A A mA V
Saturation voltage
IB1 IB2
4.2
s
Fall time
tf IB1 = -IB2 = 10 mA, duty cycle 1% ES/B Refer to Figure 1
IB2
VCC = 30 V 2.3
Unclamped inductive load energy
100
mJ
L (coil) = 10 mH
VCC = 20 V T.U.T IB1 = 0.1 A IB2 = -0.1 A IC
PW IB1 0 IB2 Clamp (C-B zener) ICP 0 VCE IC
Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min) Note 2: ES/B =
1 LICP 2 2
Figure 1
Measurement Circuit of Unclamped Inductive Load Energy ES/B 2 2002-11-20
MP4015
rth - tw
(C/W)
300 Curves should be applied in thermal 100 50 30 limited area (single nonrepetitive pulse) below figure show thermal resistance per 1 unit versus pulse width. (4)
rth
(1)
(3) (2)
Transient thermal resistance
10 5 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000
1 0.5 0.001
Pulse width
tw
(s)
Safe Operating Area
20 8
PT - Ta
(1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board
10 I max (pulsed)* C 1 ms*
(W)
Total power dissipation
5 3
10 ms*
PT
6
4
(4) (3) (2) Circuit board
IC
(A)
2 (1)
Collector current
1
0.5 0.3
0 0
40
80
120
160
200
Ambient temperature Ta (C)
*: Single nonrepetitive pulse 0.1 Ta = 25C Curves must be derated linearly with increase in temperature. 0.05 3 5 10 VCEO max 30 50 100
Collector-emitter voltage VCE
(V)
Tj - PT
160
(C)
Junction temperature increase Tj
(1) 120
(2)
(3)
(4)
80 Circuit board Attached on a circuit board 40 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 1 2 3 4 5
0 0
Total power dissipation
PT
(W)
3
2002-11-20
MP4015
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
4
2002-11-20

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